EOM Lab explores how atomically controlled thin films (ALD) enable better memory and logic technologies. We focus on device-relevant problems while training students with practical skills that translate directly to industry and graduate research.
DRAM: Modern DRAM performance is increasingly determined by ultrathin electrodes/dielectrics and interface quality. We study thin-film stacks and process conditions that impact leakage, reliability, and scaling.
3D NAND: 3D NAND relies on high-aspect-ratio, highly uniform thin-film deposition. We develop and evaluate process strategies that achieve conformal films and stable interfaces in complex 3D structures.
In advanced logic, device scaling is limited by gate stacks and interfacial defects. We investigate materials/process routes to improve interface stability and electrical performance under realistic process constraints.
We have research experience in planar crossbar devices and are expanding toward vertical architectures (e.g., vertical crossbar / vertical SOM concepts). Our goal is to connect thin-film engineering to switching behavior, variability, and reliability at the device/array level.
Deposition and engineering of metals, oxides, and chalcogenide compounds
Interface engineering for improved electrical performance and reliability
Materials/process selection guided by device requirements (leakage, stability, variability)
Area-selective ALD (AS-ALD) for nanoscale patterning and self-aligned growth concepts
Process strategies for damage-minimized integration compatible with downstream modules
Extending ALD/AS-ALD toward 3D integration challenges (complex topography, integration trade-offs)
In-situ/operando approaches to understand reaction mechanisms and growth behavior
Data-driven optimization for ALD processes: linking process conditions → film properties → device impact
Integration-minded evaluation across equipment/process/device metrics
ALD-enabled structures for high-mobility channels and reliability-enhanced stacks
Device-relevant thin-film/interface design supporting memory and logic technologies
Translating atomic-scale control into measurable electrical improvements
ALD-based process design, recipe optimization, and process window development
Connecting growth behavior to composition, structure, and interfaces
Understanding how thin-film modules fit into real semiconductor process flows (e.g., thermal budget, contamination control, patterning/etch compatibility, metrology checkpoints, and integration trade-offs)
Electrical measurements (I–V, switching, endurance/retention, variability) and data interpretation
Reading papers, designing experiments, analyzing results, writing reports, and presenting outcomes
Memory, logic, BEOL, thin-film stacks
Precursors, deposition, interface engineering
Eelectrical testing, variability, lifetime
ALD and related manufacturing tools