Conferences

(Invited)  Taeyong Eom, "Atomic Layer Deposition Processes of Chalcogenide Materials for Next-Generation Microelectronics" 5th Atomic craft workshop, ST center, Korea, Mar. 6-7 (2025)

(Invited) Taeyong Eom "Challenges and Advancements in ALD of Chalcogenide Materials for Next-Generation Microelectronics", 32th Korea semiconductor conference, High 1 grand hotel, Korea, Feb. 12-14 (2025)

Jae Hun Hwang, Youngkwon Kim, Gun Hwan Kim, and Taeyong Eom "Influence of Oxidants on the Characteristics of Atomic Layer Deposited TiO2 Thin Film", 32th Korea semiconductor conference, High 1 grand hotel, Korea, Feb. 12-14 (2025)

(Invited) Taeyong Eom, "Advanced Atomic Layer Deposition Process for Semiconductor Application" 4th Atomic craft workshop, The-K hotel seoul, Korea, Jun. 27-28 (2024)

Taeyong Eom, "Atomic Layer Deposition of Bismuth Oxyselenide Thin Films for Interface State Controlled 2D Transistor Dielectrics" KIEEME annual summer conference 2024, BEXCO convention center, Korea, Jun. 24-26 (202)

(Invited) Taeyong Eom, "Atomic layer deposition of metal thin films using reactivity-enhanced precursors" KALD 2023, Hanyang University, Korea, Apr. 28 (2023)

(Invited) Taeyong Eom, "Atomic layer deposition processes using reactivity-enhanced precursors" 3rd Atomic craft workshop, The-K hotel seoul, Korea, Mar. 17 (2023)

Hyeonbin Park, Kibum Kang, Taeyong Eom, and Taek-Mo Chung "Atomic Layer Deposition of Two-Dimensional Bismuth Oxyselenide", 30th Korea semiconductor conference, High 1 grand hotel, Korea, Feb. 13-15 (2023)

Ga Yeon Lee, Seungmin Yeo, Bo Keun Park, Taeyong Eom, and Taek-Mo Chung "Amidoxime-Containing Ti Precursors for Atomic Layer Deposition of TiN Thin Films with Suppressed Columnar Microstructure", 30th Korea semiconductor conference, High 1 grand hotel, Korea, Feb. 13-15 (2023)

Seung Hoon Oh, Hyeonbin Park, Tae Joo Park, Taeyong Eom, and Taek-Mo Chung "Atomic Layer Deposition of Ru Thin Film Using a Newly Synthesized Precursor with Open-coordinated Ligands", 30th Korea semiconductor conference, High 1 grand hotel, Korea, Feb. 13-15 (2023)

Seung Ho Ryu, JihoonJeon, Taeyong Eom, Taek-Mo Chung, In-HwanBaek, and Seong Keun Kim "Interface Improvement in Thin Film Transistors of Atomic Layer Deposited Highk/SnO", 30th Korea semiconductor conference, High 1 grand hotel, Korea, Feb. 13-15 (2023)

Hyeon Bin Park, Ki Bum Kang, Taeyong Eom, and Taek-Mo Chung "Atomic Layer Deposition of Two-Dimensional (2D) Bismuth Oxyselenides (Bi2O2Se)", 29th Korea semiconductor conference, High 1 grand hotel, Korea, Jan. 24-26 (2022)

Seung Hoon Oh, Seung Min Yeo, Hyeon Bin Park, Tae Joo Park, TaeyongEom, and Taek-Mo Chung "Atomic Layer Deposition of Ru Thin Films Using Novel Ru(Ⅱ) Precursor with Enhanced Reactivity", 29th Korea semiconductor conference, High 1 grand hotel, Korea, Jan. 24-26 (2022)

(Invited) Taeyong Eom "Atomic Layer Deposition Processes Using Newly Synthesized Precursors with Reactivity Enhanced Ligands", 29th Korea semiconductor conference, High 1 grand hotel, Korea, Jan. 24-26 (2022)

Hanuel Yang, Jungmin Hwang, Seungmin Yeo, Taeyong Eom, Gun Hwan Kim, Bo Keun Park, and Taek-Mo Chung, "Atomic Layer Deposition of Ru Thin Films Using Novel Ru(II) Precursor", 27th Korea semiconductor conference, High 1 grand hotel, Korea, Feb. 12-14 (2020)

Seungmin Yeo, Ga Yeon Lee, Haneul Yang, Taeyong Eom, Gun Hwan Kim, Bo Keun Park, Jeong Hwan Kim, Hyungjun Kim, and Taek-Mo Chung, "Atomic Layer Deposition of High Reliable Hafnium Oxide Thin Films Using a Novel Hf Metallorganic Precursor", 27th Korea semiconductor conference, High 1 grand hotel, Korea, Feb. 12-14 (2020)

(Invited) Taeyong Eom, "Craft of growth rate and composition control for atomic layer deposited Ge-Sb-Te thin film" 2nd Atomic craft workshop, The-K hotel seoul, Korea, Jul. 11 (2019)

Taeyong Eom, Taehong Gwon, Sijung Yoo, Moo-Sung Kim, lain Buchanan, Manchao Xiao and Cheol Seong Hwang, "Atomic layer deposition of Ge2Sb2Te5 thin films for phase change memories", ALD 2015, Hilton Hotel, Portland, USA, June 28 - July 1 (2015)

Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Cheol Seong Hwang, “Conformal formation of (GeTe2)(1-x)[Sb(1-y)Tey]x thin film for phase change memories application”, NVMTS2014, Jeju, Korea, Oct 27-29 (2014)

Taehong Gwon, Taeyong Eom, Sijung Yoo, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Cheol Seong Hwang, “New chemical methods for GeTe deposition for phase change memory application”, NVMTS2014, Jeju, Korea, Oct 27-29 (2014)

Sijung Yoo, Taeyong Eom, Taehong Gwon, Cheol Seong Hwang, “An analysis for bipolar resistive switching of Ge2Sb2Te5 thin films without involving obvious phase change”, NVMTS2014, Jeju, Korea, Oct 27-29 (2014)

Taeyong Eom, Taehong Gwon, Sijung Yoo, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Cheol Seong Hwang “Sub-atomic layer scale deposition using physically adsorbing precursor and kinetic analysis of deposition characteristics: Growth of (GeTe2)(1-x)(Sb2Te3)x layers using Ge4+ alkoxides”, ALD2014, Kyoto, Japan, Jun 15-18 (2014)

Taehong Gwon, Taeyong Eom, Sijung Yoo, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Cheol Seong Hwang “New Chemical Routes for Vapor Phase Deposition of GeTe for Phase Change Memory”, ALD2014, Kyoto, Japan, Jun 15-18 (2014)

Sijung Yoo, Taeyong Eom, Taehong Gwon, and Cheol Seong Hwang, "Bipolar Resistive Switching of Ge2Sb2Tes and Ge2Sb2Te7 Thin Films without Involving Obvious Phase Change" 21st Korea semiconductor conference, Hanyang University, Korea, Feb. 24-26, (2014)

Taeyong Eom,Taehong Gwon, SijungYoo. MoσSung Kim, lain Buchanan, Manchao Xiao and Cheol Seong Hwang, "Kinetic Analysis of Atomic Layer Deposition Process of (GeTe2)(1-X)(Sb2Te3)X Layers for Phase Change Memories" 21st Korea semiconductor conference, Hanyang University, Korea, Feb. 24-26, (2014)

Taehong Gwon, Taeyong Eom, SijungYoo, Moo-Sung Kim, lain Buchanan, Manchao Xiao, and Cheol Seong Hwang, "A New Chemical Route for Vapor Phase Deposition of GeTe for Phase Change Memory", 21st Korea semiconductor conference, Hanyang University, Korea, Feb. 24-26, (2014)

Taeyong Eom, Taehong Gwon, Si Jeong Yoo, Moo-Sung Kim, Manchao Xiao, Iain Buchanan, Cheol Seong Hwang, “Atomic layer deposition process and characterization of (GeTe2)x(Sb2Te3)ySbz layers for phase change memories”, ALD 2013, San Diego, US, Jul 28 - Aug 1, (2013)

Taehong Gwon, Taeyong Eom, Sijung Yoo, Moo-Sung Kim, Manchao Xiao, Iain Buchanan, Cheol Seong Hwang, “A new route for atomic layer deposition of GeTe film for phase change memories”, ALD 2013, San Diego, US, Jul 28 - Aug 1, (2013)

Taeyong Eom, Taehong Gwon, Sijung Yoo, Seol Choi, Byung Joon Choi, Moo-sung Kim, Iain Buchanan, Manchao Xiao, and Cheol Seong Hwang, "Atomic layer deposition characteristics of (GeTe2)(1-x)(Sb2Te3)x layers for Phase change memories", 20th Korea semiconductor conference, Hyundai Welli Hilli Park, Korea, Feb. 4-6, (2013)

Taeyong Eom, Taehong Gwon, Si Jung Yoo, Moo-Sung Kim, Manchao Xiao, Iain Buchanan, and Cheol Seong Hwang, "Investigation of Atomic Layer Deposition Properties of (GeTe2)1-x(Sb2Te3)x Pseudo-binary Compound for Phase Change Memory Application", Nature Conference 2012, Aachen, Germany, Jun 17 - 20, (2012)

Taeyong Eom, Taehong Gwon, Sijung Yoo, Moo-Sung Kim, Manchao Xiao, lain Buchanan, and Cheol Seong Hwang, "Atomic layer deposition of (GeTe2)(1-x)(Sb2Te3)x pseudo-binary layers for phase change memories, ALD 2012, Dresden, Germany, Jun 17 - 20, (2012)

Un Ki Kim, Yoon Jang Chung, Byoung Keon Park, Eric Eun-Suk Hwang, Min Hyuk Park, Taeyong Eom, and Cheol Seong Hwang, "Property analysis of Zinc Tin Oxide thin film grown by atomic layer deposition process", 19th Korea semiconductor conference, Korea Univ., Korea, Feb 15 - 17, (2012)

Taeyong Eom, Seol Choi, Byung Joon Choi, Min Hwan Lee, Taehong Gwon, Sang Ho Rha, Woongkyu Lee, Moo-Sung Kim, Manchao Xiao, Cheol Seong Hwang, "Atomic layer deposition of (GeTe2)1-x(Sb2Te3)x film for phase change memory", 19th Korea semiconductor conference, Korea Univ., Korea, Feb 15 - 17, (2012)

Un Ki Kim, Yoon Jang Chung, Byoung Keon Park, Eric Eun-Suk Hwang, Min Hyuk Park, Taeyong Eom, and Cheol Seong Hwang, "Investigation of zinc tin oxide thin film grown by atomic layer deposition", ITC 2012, Lisbon, Portugal, Jan 30 - 31 (2012)

Taeyong Eom, Seol Choi, Byung Joon Choi, Sang Ho Rha, Woongkyu Lee, Cheol Seong Hwang, Moo-Sung Kim, Manchao Xiao "Atomic Layer Deposition of (GeTe2)x(Sb2Te3)y films for phase change memories", 18th Korea semiconductor conference, Korea, Feb 16 - 18 (2011)

Taeyong Eom, Seol Choi, Byoung Joon Choi, Min Hwan Lee, Sang Ho Ra, Woongkyu Lee, Deok-Yong Cho, Moo-Sung Kim, Manchao Xiao, and Cheol Seong Hwang, "Thermal atomic layer deposition of GeTe2-Sb2Te3 films for the confined cell structured phase change memory", ALD 2010, Seoul, Korea, Jun 21 - 23 (2010)

Seol Choi, Byung Joon Choi, Taeyong Eom, Jae Hyuck Jang, Woong Kyu Lee and Cheol Seong Hwang, "Growth and crystallization behaviors of Ge doped Sb-Te thin films deposited by a combined plasma enhanced chemical vapor and atomic layer depositions", ISIF 2010, Conrad San Juan Condado Plaza, Puerto Rico, Jun 13 - 16 (2010)

Taeyong Eom, Seol Choi, Byung Joon Choi, Sangho Rha, Woongkyu Lee, Cheol Seong Hwang and Moo Seong Kim, "Atomic Layer Deposition of (GeTe2)x(Sb2Te3)y Films Using Novel Precursors for Phase Change Memory.", MRS spring meeting 2010 , San Francisco Marriott, Apr 6, (2010)

Seol Choi, Byung Joon Choi, Taeyong Eom, Jae Hyuck Jang, Woongkyu Lee and Cheol Seong Hwang, "Growth and Crystallization Behavior of Ge Doped SbxTey Thin Films Deposited by a Plasma-enhanced CVD.", MRS spring meeting 2010 (poster), San Francisco Marriott, US, Apr 6, (2010)

Byung Joon Choi, Taeyong Eom, Seol Choi, and Cheol Seong Hwang, "Plasma enhanced atomic layer deposition of GeSbTe films using NH3 reduction gas", ALD 2009, Monterey, CA, US, Jul 19 - 22, (2009)

Byung Joon Choi, Seol Choi, Taeyong Eom, Cheol Seong Hwang and Suk Kyoung Hong, "Switching Power Reduction in Phase Change Memory Cell using CVD Ge2Sb2Te5 and Ultra-thin TiO2 Films", 2009 MRS spring meeting, San Francisco, CA, US (2009)

Taeyong Eom, Byung Joon Choi, Seol Choi, Tae Joo Park, Jeong Hwan Kim, Minha Seo, and Cheol Seong Hwang, "Capacitive memory characteristics using Ge2Sb2Te5 with Al2O3 blocking oxide", 16th Korea semiconductor conference, DCC, Korea, Feb 18-20, (2009)

Byung Joon Choi, Seol Choi, Taeyong Eom, Seung Hwan Oh, Kyung-Woo Yi, Cheol Seong Hwang, Yoon Jung Kim, and Suk Kyoung Hong,  "The role of TiO2 interfacial layer for the operation of PCRAM fabricated by using the chemical vapor deposited Ge2Sb2Te5 films", 16th Korea semiconductor conference, DCC, Korea, Feb 18 - 20, (2009)

Cheol Seong Hwang, Byung Joon Choi, Seol Choi, Taeyong Eom, Kyung Min Kim, Yong Cheol Shin, Yoon Jung Kim, Hae Chan Park, Suk Kyoung Hong, "Plasma enhanced atomic layer deposition of Ge2Sb2Te5 films and its applications to high speed phase change memory", ALD 2008, Bruges, Belgium, Jun 29 - Jul 2, (2008)

CHOI Byung Joon, OH Seung Hwan, CHOI Seol, EOM Taeyong, SHIN Yong Cheol, KIM Kyung Min, KIM Yoon Jung, PARK Hae Chan, BAEK Tae Sun, HONG Suk Kyoung, YI Kyung-Woo, and HWANG Cheol Seong, "Reduction in the switching power of phase change memory cell using an ultra-thin TiO2 film", 2008 Korea ceramic conference, Seoul national university, Korea, Apr 25 - 26, (2008)