Papers

Jae Hun Hwang, Ga Yeon Lee, Jin Joo Ryu, Ji Woon Choi, Take-Mo Chung, Young Yong Kim, Seung Hoon Oh, Sungjin Park, Youngkwon Kim, Gun Hwan Kim, and Taeyong Eom, Influence of oxidants on the characteristics of atomic layer deposited TiO2 thin films. Appl. Surf. Sci. 698, 163044 (2025) [Link]

Min Gyoo Cho, Sehwan Jeon, Hyun Wook Kim, Ju Hwan Park, Taeyong Eom, and Byung Joon Choi, Composition-controllable growth of GeTex thin films via combined atomic layer deposition and chemical vapor deposition. J. Mater. Chem. C (2025) [Link]

Jin Joo Ryu, Kanghyeok Jeon, Hyun Kyu Seo, Taeyong Eom, Min Kyu Yang, and Gun Hwan Kim, Structural Optimization of Chalcogenide Thin Films for Enhancing the Threshold Switching Performance. ACS Appl. Mater. Interfaces 16 (50), 69564-69575 (2024) [Link]

Hyeonbin Park, Jae Hun Hwang, Seung Hoon Oh, Jin Joo Ryu, Kanghyeok Jeon, Minsoo Kang, Hyun-Jun Chai, Ayoung Ham, Gun Hwan Kim, Kibum Kang, and Taeyong Eom, Direct Growth of Bi2SeO5 Thin Films for High-k Dielectrics via Atomic Layer Deposition. ACS Nano 18 (33), 22071–22079 (2024) [Link]

Jeongwon Park, Seung Jae Kwak, Sumin Kang, Saeyoung Oh, Bongki Shin, Gichang Noh, Tae Soo Kim, Changhwan Kim, Hyeonbin Park, Seung Hoon Oh, Woojin Kang, Namwook Hur, Hyun-Jun Chai, Minsoo Kang, Seongdae Kwon, Jaehyun Lee, Yongjoon Lee, Eoram Moon, Chuqiao Shi, Jun Lou, Won Bo Lee, Joon Young Kwak, Heejun Yang, Taek-Mo Chung, Taeyong Eom, Joonki Suh, Yimo Han, Hu Young Jeong, YongJoo Kim, and Kibum Kang, Area-selective atomic layer deposition on 2D monolayer lateral superlattices. Nat. Commun. 15 (1), 2138 (2024) [Link]

Kanghyeok Jeon, Jin Joo Ryu, Seongil Im, Hyun Kyu Seo, Taeyong Eom, Hyunsu Ju, Min Kyu Yang, Doo Seok Jeong, and Gun Hwan Kim, Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators. Nat. Commun. 15 (1), 129 (2024) [Link]

Ga Yeon Lee, Seung-Hun Lee, In Ho Jo, Chan-Mi Cho, Svetlana Shostak, Ji Yeon Ryu, Bo Keun Park, Seung Uk Son, Cheol Ho Choi, Taeyong Eom, Jeong Hwan Kim, and Taek-Mo Chung, Amidoxime-Containing Zr and Hf Atomic Layer Deposition Precursors for Metal Oxide Thin Films. Inorg. Chem. 63 (1), 537-547 (2023) [Link]

Heenang Choi, Chanwoo Park, Sung Kwang Lee, Ji Yeon Ryu, Seung Uk Son, Taeyong Eom, and Taek-Mo Chung, New Heteroleptic Germanium Precursors for GeO2 Thin Films by Atomic Layer Deposition. ACS Omega 8 (46), 43759-43770 (2023) [Link]

Hyeonbin Park, Heenang Choi, Sunyoung Shin, Bo Keun Park, Kibum Kang, Ji Yeon Ryu, Taeyong Eom, and Taek-Mo Chung, Evaluation of tin nitride (Sn3N4) via atomic layer deposition using novel volatile Sn precursors. Dalton Trans. 52, 15033-15042 (2023) [Link]

Jin Joo Ryu, Kanghyeok Jeon, Taeyong Eom, Min Kyu Yang, Hyunchul Sohn, and Gun Hwan Kim, Optimized chalcogenide medium for inherently activated resistive switching device. Appl. Surf. Sci. 641, 158444 (2023) [Link]

Seung Ho Ryu, Jihoon Jeon, Gwang Min Park, Taikyu Kim, Taeyong Eom, Taek-Mo Chung, In-Hwan Baek, and Seong Keun Kim, Controlled orientation and microstructure of p-type SnO thin film transistors with high-k dielectric for improved performance. Appl. Phys. Lett. 123 (7), 073505 (2023) [Link]

Seung Hoon Oh, Jeong Min Hwang, Hyeonbin Park, Dongseong Park, Young Eun Song, Eun Chong Ko, Tae Joo Park, Taeyong Eom, and Taek-Mo Chung, Atomic Layer Deposition of Ru Thin Film Using a Newly Synthesized Precursor with Open-Coordinated Ligands. Adv. Mater. Interfaces 10 (17), 2202445 (2023) [Link]

Ga Yeon Lee, Seungmin Yeo, Chan-Mi Cho, Seung Hoon Oh, Hyeonbin Park, Bo Keun Park, Seung Uk Son, Taeyong Eom, and Taek-Mo Chung, Amidoxime-Containing Ti Precursors for Atomic Layer Deposition of TiN Thin Films with Suppressed Columnar Microstructure. Inorg. Chem. 62 (11), 4680–4687 (2023) [Link]

Mingu Kang, Hyunwoo Kim, Elham Oleiki, Yeonjeong Koo, Hyeongwoo Lee, Huitae Joo, Jinseong Choi, Taeyong Eom, Geunsik Lee, Yung Doug Suh, and Kyoung-Duck Park, Conformational heterogeneity of molecules physisorbed on a gold surface at room temperature. Nat. Commun. 13 (1), 4133 (2022) [Link]

Young Geun Song, In-Hwan Baek, Jae-Gyun Yim, Taeyong Eom, Taek-Mo Chung, Chul-Ho Lee, Cheol Seong Hwang, Chong-Yun Kang, and Seong Keun Kim, Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO2 detection at room temperature. J. Mater. Chem. A 10 (9), 4711-4719 (2022) [Link]

Seung-Jong Yoo, Raphael Edem Agbenyeke, Heenang Choi, Kanghyeok Jeon, Jin Joo Ryu, Taeyong Eom, Bo Keun Park, Taek-Mo Chung, Doo Seok Jeong, Wooseok Song, and Gun Hwan Kim, Strategic allocation of two-dimensional van der Waals semiconductor as an oxygen reservoir for boosting resistive switching reliability. Appl. Surf. Sci. 577, 151936 (2021) [Link]

Seong Ho Han, Raphael Edem Agbenyeke, Ga Yeon Lee, Bo Keun Park, Chang Gyoun Kim, Taeyong Eom, Seung Uk Son, Jeong Hwan Han, Ji Yeon Ryu, and Taek-Mo Chung, Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO2 Thin Films Depending on Conditions Using Chemical Solution Deposition. ACS Omega 7 (1), 1232-1243 (2022) [Link]

Ga Yeon Lee, Seungmin Yeo, Seong Ho Han, Bo Keun Park, Taeyong Eom, Jeong Hwan Kim, Soo-Hyun Kim, Hyungjun Kim, Seung Uk Son, and Taek-Mo Chung, Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films. Inorg. Chem. 60 (23), 17722-17732 (2021) [Link]

Jeong Min Hwang, Sung Kwang Lee, Sunyoung Shin, Ji-Seoung Jeong, Hae Sun Kim, Ji Yeon Ryu, Taeyong Eom, Bo Keun Park, Chang Gyoun Kim, and Taek-Mo Chung, New Volatile Tantalum Imido Precursors with Carboxamide Ligands. ACS Omega 6 (38), 24795-24802 (2021) [Link]

In-Hwan Baek, Ah-Jin Cho, Ga Yeon Lee, Heenang Choi, Sung Ok Won, Taeyong Eom, Taek-Mo Chung, Cheol Seong Hwang, and Seong Keun Kim, Enhancement of electrical performance of atomic layer deposited SnO films via substrate surface engineering. J. Mater. Chem. C 9 (36), 12314-12321 (2021) [Link]

Dagyum Yoo, Seong Ho Han, Sung Kwang Lee, Taeyong Eom, Bo Keun Park, Chang Gyoun Kim, Seung Uk Son, and Taek-Mo Chung, Synthesis of New Heteroleptic Indium Complexes as Potential Precursors for Indium Oxide Thin Films. Eur. J. Inorg. Chem. 2021 (25), 2480-2485 (2021) [Link]

Na Yeon Kim, Jeong Min Hwang, Seong Ho Han, Ga Yeon Lee, Bo Keun Park, Taeyong Eom, Seung Uk Son, and Taek-Mo Chung, Synthesis of Heteroleptic Zinc Complexes Containing Aminoalkoxide and β-Diketonate Ligands. ChemistrySelect 6 (24), 5880-5884 (2021) [Link]

Jeong Min Hwang, Na Yeon Kim, Sunyoung Shin, Ji Hun Lee, Ji Yeon Ryu, Taeyong Eom, Bo Keun Park, Chang Gyoun Kim, and Taek-Mo Chung, Synthesis of novel volatile niobium precursors containing carboxamide for Nb2O5 thin films. Polyhedron 200, 115134 (2021) [Link]

Jeong Min Hwang, Seung-Min Han, Hanuel Yang, Seungmin Yeo, Seung-Hun Lee, Chan Woo Park, Gun Hwan Kim, Bo Keun Park, Younghun Byun, Taeyong Eom, and Taek-Mo Chung, Atomic layer deposition of a ruthenium thin film using a precursor with enhanced reactivity. J. Mater. Chem. C 9, 3820-3825 (2021) [Link]

Taeyong Eom, Songhee Kim, Raphael E. Agbenyeke, Hyunmin Jung, Seon Min Shin, Young Kuk Lee, Chang Gyoun Kim, Taek-Mo Chung, Nam Joong Jeon, Helen Hejin Park, and Jangwon Seo, Copper Oxide Buffer Layers by Pulsed-Chemical Vapor Deposition for Semitransparent Perovskite Solar Cells. Adv. Mater. Interfaces 8 (1), 2001482 (2021) [Link]

Younjin Jang, Jun Shik Kim, Sukin Kang, Jihun Kim, Yonghee Lee, Kwangmin Kim, Whayoung Kim, Heenang Choi, Nayeon Kim, Taeyong Eom, Taek-Mo Chung, Woojin Jeon, Sang Yoon Lee, and Cheol Seong Hwang, Comparative Study on the Gate-Induced Electrical Instability of p-Type SnO Thin-Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics. phys. status solidi (RRL) – Rapid Research Letters 14 (10), 2000304 (2020) [Link]

Eui-Sang Park, Chanyoung Yoo, Woohyun Kim, Manick Ha, Jeong Woo Jeon, Taeyong Eom, Yoon Kyeung Lee, and Cheol Seong Hwang, Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory. Chem. Mater. 31 (21), 8752-8763 (2019) [Link]

Seung Ik Oh, In Hyuk Im, Chanyoung Yoo, Sung Yeon Ryu, Yong Kim, Seok Choi, Taeyong Eom, Cheol Seong Hwang, and Byung Joon Choi, Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory. Micromachines 10 (5), 281 (2019) [Link]

Taehong Gwon, Taeyong Eom, Sijung Yoo, Chanyoung Yoo, Eui-sang Park, Sanggyun Kim, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Sergei Ivanov, and Cheol Seong Hwang, Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms. Chem. Mater. 29 (19), 8065-8072 (2017) [Link]

Taehong Gwon, Taeyong Eom, Sijung Yoo, Han-Koo Lee, Deok-Yong Cho, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, Sergei Ivanov, and Cheol Seong Hwang, Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol. Chem. Mater. 28 (19), 7158-7166 (2016) [Link]

Sijung Yoo, Taehong Gwon, Taeyong Eom, Sanggyun Kim, and Cheol Seong Hwang, Multicolor Changeable Optical Coating by Adopting Multiple Layers of Ultrathin Phase Change Material Film. ACS Photonics 3 (7), 1265-1270 (2016) [Link]

Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo-Sung Kim, Iain Buchanan, Sergei Ivanov, Manchao Xiao, and Cheol Seong Hwang, Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application. Chem. Mater. 27 (10), 3707-3713 (2015) [Link]

Woongkyu Lee, Woojin Jeon, Cheol Hyun An, Min Jung Chung, Han Joon Kim, Taeyong Eom, Sheby Mary George, Bo Keun Park, Jeong Hwan Han, Chang Gyoun Kim, Taek-Mo Chung, Sang Woon Lee, and Cheol Seong Hwang, Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor. Chem. Mater. 27 (11), 3881-3891 (2015) [Link]

Sijung Yoo, Taeyong Eom, Taehong Gwon, and Cheol Seong Hwang, Bipolar resistive switching behavior of an amorphous Ge2Sb2Te5 thin films with a Te layer. Nanoscale 7 (14), 6340-6347 (2015) [Link]

Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo-Sung Kim, Sergei Ivanov, Andrew Adamczyk, Iain Buchanan, Manchao Xiao, and Cheol Seong Hwang, Chemical interaction and ligand exchange between [(CH3)3Si]3Sb precursor and atomic layer deposited Sb2Te3 films. J. Mater. Chem. C 3 (6), 1365-1370 (2015) [Link]

Taeyong Eom, Taehong Gwon, Sijung Yoo, Byung Joon Choi, Moo-Sung Kim, Iain Buchanan, Manchao Xiao, and Cheol Seong Hwang, Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)(1–x)(Sb2Te3)x Layers Using Ge4+–Alkoxide Precursors. Chem. Mater. 26 (4), 1583-1591 (2014) [Link]

Sang Woon Lee, Byung Joon Choi, Taeyong Eom, Jeong Hwan Han, Seong Keun Kim, Seul Ji Song, Woongkyu Lee, and Cheol Seong Hwang, Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials. Coord. Chem. Rev. 257 (23-24), 3154-3176 (2013) [Link]

Taeyong Eom, Seol Choi, Byung Joon Choi, Min Hwan Lee, Taehong Gwon, Sang Ho Rha, Woongkyu Lee, Moo-Sung Kim, Manchao Xiao, Iain Buchanan, Deok-Yong Cho, and Cheol Seong Hwang, Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories. Chem. Mater. 24 (11), 2099-2110 (2012) [Link]

Seol Choi, Byung Joon Choi, Taeyong Eom, Jae Hyuck Jang, Woongkyu Lee, and Cheol Seong Hwang, Growth and Phase Separation Behavior in Ge-Doped Sb−Te Thin Films Deposited by Combined Plasma-Enhanced Chemical Vapor and Atomic Layer Depositions. J. Phys. Chem. C 114 (41), 17899-17904 (2010) [Link]

Byung Joon Choi, Seol Choi, Taeyong Eom, Sang Ho Rha, Kyung Min Kim, and Cheol Seong Hwang, Phase change memory cell using Ge[sub 2]Sb[sub 2]Te[sub 5] and softly broken-down TiO[sub 2] films for multilevel operation. Appl. Phys. Lett. 97 (13), 132107 (2010) [Link]

Taeyong Eom, Byung Joon Choi, Seol Choi, Tae Joo Park, Jeong Hwan Kim, Minha Seo, Sang Ho Rha, and Cheol Seong Hwang, Ge2Sb2Te5 Charge Trapping Nanoislands with High-k Blocking Oxides for Charge Trap Memory. Electrochem. Solid-State Lett. 12 (10), H378-H380 (2009) [Link]

Byung Joon Choi, Seol Choi, Taeyong Eom, Seung Wook Ryu, Deok-Yong Cho, Jaeyong Heo, Hyeong Joon Kim, Cheol Seong Hwang, Yoon Jung Kim, and Suk Kyong Hong, Influence of substrate on the nucleation and growth behaviors of Ge2Sb2Te5 films by combined plasma-enhanced atomic layer and chemical vapor deposition. Chem. Mater. 21 (12), 2386-2396 (2009) [Link]

Byung Joon Choi, Seung Hwan Oh, Seol Choi, Taeyong Eom, Yong Cheol Shin, Kyung Min Kim, Kyung-Woo Yi, Cheol Seong Hwang, Yoon Jung Kim, Hae Chan Park, Tae Sun Baek, and Suk Kyoung Hong, Switching Power Reduction in Phase Change Memory Cell Using CVD Ge2Sb2Te5 and Ultrathin TiO2 Films. J. Electrochem. Soc. 156 (1), H59 (2009) [Link]

Yong Cheol Shin, Jaewon Song, Kyung Min Kim, Byung Joon Choi, Seol Choi, Hyun Ju Lee, Gun Hwan Kim, Taeyong Eom, and Cheol Seong Hwang, (In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array. Appl. Phys. Lett. 92 (16), 162904 (2008) [Link]